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1 article(s) from Piagge, Rossella

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

Silvia Vangelista,
Rossella Piagge,
Satu Ek and
Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

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Figure 1: XRR experimental curves and data fitting of the (a) CeO₂/TiN and (b) CeO₂/Si: as deposited (blue sy...

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Figure 2: ToF-SIMS depth profiles of (a) CeO₂/TiN as-deposited (RT) and annealed at 400 and 600 °C in N₂ and ...

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Figure 3: TEM image (cross-sectional view) of CeO₂ on TiN annealed at 600 °C.

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Figure 4: XPS spectra (both experimental and fitting curves) collected at 45° take-off angle of (a) CeO₂/TiN ...

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Figure 5: TEM image (cross-sectional view) of CeO₂ on Si annealed at 900 °C.

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Figure 6: GIXRD profiles of (a) CeO₂/TiN and (b) CeO₂/Si as-deposited and in situ annealed during acquisition...

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Figure 7: Fraction of the crystalline planes oriented in each respective crystalline direction as a function ...

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Figure 8: TEM image (plan-view) of CeO₂ on Si annealed at 900 °C. Inset: histogram showing the grain size dis...

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Figure 9: High-resolution TEM image (plan-view) of CeO₂ on Si annealed at 900 °C. The lattice fringes of (111...

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Full Research Paper

Published 15 Mar 2018

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Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition